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MMT08B064T3G

Part No MMT08B064T3G
Manufacturer ON Semiconductor
Catalog TVS - Thyristors
Description THYRISTOR 58V 250A SMB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Circuit Protection
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Voltage - Breakover 77V
Voltage - Off State 58V
Voltage - On State 3V
Current - Peak Pulse (8/20μs) 250A
Peak Pulse Current(Ippm) 80A
Current - Hold (Ih) 150mA
Number of Elements 1
Capacitance 130pF
Mounting SMD (SMT)
Dimension DO-214AA, SMB
Win Source Part Number 041743-MMT08B064T3G
Ultra Librarian 3D Model Ultra Librarian MMT08B064T3G CAD Model

Description

ON Semiconductor MMT08B064T3G Overview

The MMT08B064T3G is a high-performance, power MOSFET transistor module designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This module is part of the company's extensive portfolio of power semiconductors that cater to a wide range of applications including automotive, industrial, and consumer electronics.

Key Features

  • Low RDS(on): The MMT08B064T3G boasts a very low on-state resistance, which reduces conduction losses and improves efficiency in power conversion applications.
  • High Current Capacity: With a continuous drain current rating, this MOSFET module is capable of handling high current loads, making it suitable for demanding applications.
  • Thermal Management: The device is encapsulated in a thermally efficient package that facilitates heat dissipation, ensuring reliable operation under varying temperature conditions.
  • Gate Charge: It features an optimized gate charge that enables fast switching performance, which is crucial for reducing switching losses in power converters.
  • Robust Design: The MMT08B064T3G is designed to withstand harsh environments, thanks to its ruggedized construction that enhances its durability and longevity.

Applications

The versatility of the MMT08B064T3G allows it to be used in a wide array of applications, including:

  • DC/DC Converters
  • Motor Drives
  • Power Supplies
  • Automotive Electronics
  • Renewable Energy Systems

Technical Specifications

Some of the key technical specifications of the MMT08B064T3G include:

  • Drain-to-Source Voltage (VDSS): 30V
  • Continuous Drain Current (ID): 64A
  • Power Dissipation (PD): 110W
  • RDS(on) Max @ VGS = 10V: 8mΩ
  • Operating Temperature Range: -55°C to +150°C

Quality and Reliability

ON Semiconductor is committed to delivering products that meet the highest standards of quality and reliability. The MMT08B064T3G is no exception, as it undergoes rigorous testing and quality control procedures to ensure it meets the stringent requirements of the industry.

For engineers and designers looking for a robust and efficient power MOSFET solution, the MMT08B064T3G from ON Semiconductor represents a reliable choice that can enhance the performance and efficiency of their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $3.0226 $60.4520
47+ $2.4798 $116.5506
73+ $2.4024 $175.3752
100+ $2.3250 $232.5000
129+ $2.2476 $289.9404
172+ $2.0155 $346.6660
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Availability: 12,300 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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