The LE25CB5122M-TLM-E is a cutting-edge EEPROM (Electrically Erasable Programmable Read-Only Memory) device designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This memory component is engineered to provide a reliable and flexible storage solution for a wide range of electronic applications.

Key Features

• Memory Capacity: The device comes with a substantial 512 Kbit storage capacity, which is ideal for applications requiring moderate amounts of data storage without the need for frequent updates.
• Interface: It features an SPI (Serial Peripheral Interface) that allows for high-speed data transfer and simple integration with microcontrollers and other digital systems.
• Operating Voltage: The LE25CB5122M-TLM-E operates over a wide range of supply voltages from 2.5V to 5.5V, making it versatile for various power environments.
• Temperature Range: This EEPROM can operate across an extended temperature range, ensuring reliable performance in diverse operating conditions.
• Endurance: It offers an excellent data retention period and high endurance, ensuring data integrity over an extended period with multiple write cycles.

Applications

The LE25CB5122M-TLM-E is suitable for a plethora of applications where data storage is critical. It is commonly used in consumer electronics, automotive systems, industrial controls, and medical devices. Its robustness and reliability make it an excellent choice for storing configuration parameters, calibration data, and any other application where data may need to be updated periodically but must remain secure and uncorrupted.

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The LE25CB5122M-TLM-E is no exception, with its design and production adhering to stringent quality control standards. Customers can trust the durability and performance of this EEPROM for their critical data storage needs.