ON Semiconductor LC35V256EM-70W-TE-L SRAM Overview

The LC35V256EM-70W-TE-L is a high-performance, low-power Static Random Access Memory (SRAM) module designed and manufactured by ON Semiconductor. This SRAM device is engineered to provide fast data access and reliability for a wide range of industrial, automotive, and consumer electronics applications.

Key Features

• Memory Capacity: The LC35V256EM-70W-TE-L comes with a storage capacity of 256Kb, which is ideal for applications that require a moderate amount of fast, volatile memory.
• Access Time: With an access time of 70ns, this SRAM module ensures quick data retrieval, making it suitable for high-speed operations.
• Operating Voltage: It operates within a voltage range of 4.5V to 5.5V, providing flexibility and compatibility with a variety of digital circuits.
• Package Type: The device is housed in a TSOP-28 package, which is known for its compact footprint and suitability for surface-mount technology (SMT).
• Temperature Range: This SRAM is designed to operate over an extended temperature range, making it reliable in various environmental conditions.

Applications

The ON Semiconductor LC35V256EM-70W-TE-L is versatile and can be used in various applications, including:

• Embedded systems and microcontroller-based applications
• Automotive electronics that require fast memory access
• Industrial control systems for real-time data processing
• Telecommunications equipment for buffering and data storage
• Consumer electronics such as gaming consoles and smart devices

Reliability and Quality

ON Semiconductor is known for its commitment to quality and reliability. The LC35V256EM-70W-TE-L SRAM module is no exception, as it is built to meet the stringent requirements of various industries. The device undergoes rigorous testing to ensure its performance and durability under a range of conditions.

Conclusion

The LC35V256EM-70W-TE-L from ON Semiconductor is a reliable and efficient SRAM module that offers quick access times and a robust feature set for a multitude of electronic applications. Its compatibility with a wide operating temperature range and various voltage levels makes it a versatile choice for designers seeking a memory solution that balances performance with power efficiency.