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HUF75545S3S

Part No HUF75545S3S
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET | MOSFET N-CH 80V 75A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 80V
Id - Continuous Drain Current 75A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 10mOhm at 75A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 235nC at 20V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3750pF at 25V
Power Dissipation (Maximum) 270W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK (TO-263AB)
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1182437-HUF75545S3S
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HUF75545S3S CAD Model

Description

The HUF75545S3S, crafted by the renowned ON Semiconductor, is a state-of-the-art Power MOSFET designed to cater to a wide array of power management and switching applications. This high-performance component is a key player in the realm of efficient energy control, making it an ideal choice for designers looking to enhance the reliability and efficiency of their electronic designs.

Key Features

  • Low On-Resistance: The HUF75545S3S boasts a remarkably low on-resistance, which significantly reduces conduction losses, leading to more efficient power management in electronic circuits.
  • High Current Capability: With its ability to handle high amounts of current, this MOSFET is perfectly suited for applications that demand robust current flow without sacrificing performance.
  • Dynamic dv/dt Rating: The device is engineered with an excellent dynamic dv/dt rating, providing reliable operation even under conditions of rapid voltage changes, which is crucial for high-speed switching applications.
  • 175°C Operating Temperature: The HUF75545S3S is capable of operating at temperatures up to 175°C, making it highly reliable in extreme thermal environments and suitable for high-temperature applications.
  • Logic Level Gate Drive: This feature allows for the MOSFET to be driven by low-voltage logic signals, making it compatible with modern microcontrollers and digital circuits without the need for additional level-shifting components.

Applications

The versatility of the HUF75545S3S makes it an excellent choice for a wide range of applications, including:

  • Power Supplies
  • DC-DC Converters
  • Motor Drives
  • Automotive Applications
  • Switching Regulators
  • Power Management Solutions

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products that exceed industry standards for reliability. The HUF75545S3S is no exception, providing designers with a robust, durable, and reliable component that ensures long-term performance in critical applications. With ON Semiconductor's expertise in power management technology, the HUF75545S3S is a product that engineers can trust to meet their most demanding requirements.

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