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HUF75329D3S

Part No HUF75329D3S
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs | MOSFET N-CH 55V 20A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 55V
Id - Continuous Drain Current 20A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 26mOhm at 20A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 65nC at 20V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1060pF at 25V
Power Dissipation (Maximum) 128W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package TO-252AA
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 1,800
MSL Level 1 (Unlimited)
Win Source Part Number 1182430-HUF75329D3S
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HUF75329D3S CAD Model

Description

ON Semiconductor HUF75329D3S N-Channel Power MOSFET

The HUF75329D3S is a high-performance N-Channel Power MOSFET brought to you by ON Semiconductor, a brand renowned for its innovative approach in semiconductor technology. This MOSFET is designed to meet the demands of a wide range of applications, offering efficient power management and high-speed switching capabilities.

Constructed with ON Semiconductor's advanced process technology, the HUF75329D3S features a 55V drain-to-source voltage (VDS), which provides a robust platform for high-voltage operations. The device supports a continuous drain current (ID) of 49A, making it suitable for handling high current loads efficiently. Moreover, its low on-state resistance (RDS(on)) of 0.008Ω at VGS = 10V ensures minimal power loss and heat generation during operation, thus enhancing system reliability and performance.

The HUF75329D3S comes in a TO-252 (DPAK) package, which is not only compact but also offers excellent thermal performance. This makes it an ideal choice for space-constrained applications that require efficient heat dissipation. Additionally, the package is designed for easy mounting on printed circuit boards, facilitating smooth integration into various electronic systems.

This MOSFET is optimized for use in a variety of applications, including switch mode power supplies (SMPS), DC-DC converters, motor drives, and power management circuits. Its fast switching speed and robustness also make it suitable for high-frequency applications such as Pulse Width Modulated (PWM) systems and power inverters.

ON Semiconductor's commitment to environmental sustainability is evident in the HUF75329D3S, which is Pb-free and Halogen-free, complying with current RoHS regulations. This ensures that the product is not only high-performing but also environmentally friendly.

In summary, the HUF75329D3S from ON Semiconductor is a powerful and versatile N-Channel MOSFET that offers excellent efficiency, thermal performance, and reliability for a wide array of power applications. Its robust design and advanced features make it a top choice for engineers and designers looking to optimize their power management systems.

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