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FGH40T65SPD-F155

Part No FGH40T65SPD-F155
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 650V 80A 267W TO-247 / IGBT Trench Field Stop 650 V 80 A 267 W Through Hole TO-247-3
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr onsemi
Package Tube
Product Status Obsolete
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A
Power - Max 267 W
Switching Energy 1.16mJ (on), 280µJ (off)
Input Type Standard
Gate Charge 35 nC
Td (on/off) @ 25°C 16ns/37ns
Test Condition 400V, 40A, 6Ohm, 15V
Reverse Recovery Time (trr) 34 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number FGH40
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names FGH40T65SPD_F155-ND,1990-FGH40T65SPD-F155,FGH40T65SPD_F155
Standard Package 30
Win Source Part Number 1026884-FGH40T65SPD-F155
Ultra Librarian 3D Model Ultra Librarian FGH40T65SPD-F155 CAD Model

Description

The FGH40T65SPD-F155 is a cutting-edge Silicon Carbide (SiC) Power Field-Effect Transistor (FET) designed and manufactured by ON Semiconductor. This high-performance component is engineered to meet the demanding requirements of a wide range of power applications, including electric vehicles, solar inverters, and industrial motor drives. With its advanced SiC technology, the FGH40T65SPD-F155 offers superior efficiency, faster switching speeds, and improved thermal performance compared to traditional silicon-based power devices.

Key Features:

  • Breakdown Voltage: The device boasts a high breakdown voltage of 650V, providing a robust and reliable solution for high-voltage applications.
  • Low On-Resistance: With an on-resistance (RDS(on)) as low as 40 mΩ, it ensures minimal conduction losses and enhances overall system efficiency.
  • High Current Capacity: The FGH40T65SPD-F155 can handle continuous currents up to 85A, making it suitable for high-power applications.
  • Fast Switching Speed: The device's fast switching capabilities reduce switching losses and enable operation at higher frequencies, which can lead to smaller and lighter system designs.
  • Low Gate Charge: A low gate charge (QG) facilitates easier drive and control, contributing to the reduction of switching losses and improving the total power efficiency.
  • Enhanced Thermal Performance: The SiC material provides excellent thermal conductivity, ensuring the FET operates reliably even under high-temperature conditions.
  • Package: The FGH40T65SPD-F155 comes in a TO-247 package, which is widely used for high-power applications due to its ability to handle significant current and provide good heat dissipation.

Applications:

The ON Semiconductor FGH40T65SPD-F155 SiC FET is ideal for a variety of applications that require high efficiency, fast switching, and high thermal performance. These include but are not limited to:

  • Electric Vehicle (EV) Powertrains
  • Photovoltaic (PV) Inverters
  • Uninterruptible Power Supplies (UPS)
  • Energy Storage Systems
  • Industrial Motor Drives

Integrating the FGH40T65SPD-F155 into your power system design can lead to increased efficiency, reduced size and weight of the end product, and improved reliability, making it a top choice for designers looking to leverage the benefits of Silicon Carbide technology.

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $3.9443 $51.2759
31+ $3.2363 $100.3253
48+ $3.1352 $150.4896
66+ $3.0341 $200.2506
86+ $2.9329 $252.2294
115+ $2.6295 $302.3925
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 330 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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