ON Semiconductor FDV336P P-Channel MOSFET

The FDV336P is a high-performance, P-Channel PowerTrench® MOSFET designed and manufactured by ON Semiconductor, a recognized leader in power management and precision analog solutions. This advanced power MOSFET is optimized for battery power management, load switch, and power switching applications, making it a suitable choice for a wide range of electronic devices.

This MOSFET is built using ON Semiconductor's proprietary PowerTrench process that enables the FDV336P to achieve very low on-state resistance (R_DS(on)) and to maintain excellent switching performance. The low threshold voltage (V_GS(th)) characteristic of this P-Channel MOSFET makes it ideal for low voltage operations, which is particularly beneficial for portable and battery-operated devices where energy efficiency is a critical factor.

The FDV336P comes in a compact SuperSOT™-3 package, which not only saves valuable board space but also provides excellent thermal performance. The device is rated for a drain-source voltage (V_DSS) of -20V and a continuous drain current (I_D) of -1.8A, making it capable of handling moderate power levels. Additionally, the MOSFET has a maximum power dissipation (P_D) of 0.5W, which contributes to its reliability and longevity in various applications.

Key features of the FDV336P include its fast switching speed, low gate charge (Q_G), and the ability to operate at low gate voltages, which enhances the overall efficiency of the system in which it is used. It is also designed with a body diode, which provides reverse current protection and contributes to the safe operation of the device under abnormal conditions.

ON Semiconductor's commitment to quality ensures that the FDV336P MOSFET meets the stringent requirements of the electronics industry. Whether you're designing power management circuits for mobile phones, PDAs, or other portable applications, the FDV336P offers the performance, efficiency, and reliability needed to develop cutting-edge products.