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FCH76N60N

Part No FCH76N60N
Manufacturer ON Semiconductor
Catalog FETs - Single
Description N-Channel MOSFET | MOSFET N-CH 600V 76A TO-247
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 76A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 36mOhm at 38A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 285nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 12385pF at 100V
Power Dissipation (Maximum) 543W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247-3
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 450
MSL Level 1 (Unlimited)
Win Source Part Number 1173605-FCH76N60N
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FCH76N60N CAD Model

Description

FCH76N60N N-Channel MOSFET Overview

The FCH76N60N is a high-performance N-Channel MOSFET manufactured by ON Semiconductor, designed to address a wide range of power applications. This device is part of ON Semiconductor's portfolio of energy-efficient power management solutions, offering designers a balance of robustness, reliability, and efficiency.

Key Features

  • Voltage Rating: The FCH76N60N boasts a drain-to-source voltage (V<sub>DS) of 600V, making it suitable for high-voltage applications.
  • Current Capacity: With a continuous drain current (I<sub>D) of 76A, this MOSFET can handle significant power without overheating, thanks to its low on-state resistance.
  • Low R<sub>DS(on): The device features a low on-state resistance typically around 0.029Ω, which minimizes conduction losses and improves overall efficiency.
  • Fast Switching: Engineered for fast switching performance, the FCH76N60N reduces switching losses, which is crucial for high-frequency applications.
  • Robust Body Diode: It includes a rugged intrinsic body diode that can handle high energy pulses during avalanche and commutation operations, enhancing the device's reliability.

Applications

The versatility of the FCH76N60N allows it to be used in a variety of applications, including:

  • Power supply units
  • DC-DC converters
  • Motor drives
  • Inverters
  • Lighting systems
  • High-voltage switching circuits

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The FCH76N60N MOSFET is no exception, as it is produced with state-of-the-art manufacturing techniques and rigorous testing to ensure performance under extreme conditions. This focus on quality ensures that the FCH76N60N will provide reliable service for the lifetime of your application.

Environmental Considerations

ON Semiconductor understands the importance of environmental stewardship. The FCH76N60N is designed with eco-friendly materials and complies with international environmental regulations, reflecting ON Semiconductor's dedication to reducing the environmental impact of electronic components.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $11.2890 $67.7340
13+ $9.2631 $120.4203
20+ $8.9732 $179.4640
27+ $8.6844 $234.4788
35+ $8.3945 $293.8075
47+ $7.5260 $353.7220
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,900 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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