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ECH8601R-V-TL-E

Part No ECH8601R-V-TL-E
Manufacturer ON Semiconductor
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family FETs - Single
Manufacturer ON Semiconductor
Win Source Part Number 255841-ECH8601R-V-TL-E
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ECH8601R-V-TL-E CAD Model

Description

ON Semiconductor ECH8601R-V-TL-E

The ECH8601R-V-TL-E is a high-performance, P-Channel PowerTrench® MOSFET, designed and manufactured by ON Semiconductor, a leading provider in energy-efficient electronics innovation. This product is engineered to deliver low on-state resistance and minimal power loss, making it an ideal choice for power management applications.

Key Features

  • Low On-Resistance: The device features an extremely low on-state resistance (RDS(on)), ensuring high efficiency in power conversion and regulation.
  • High-Speed Switching: Its fast switching capabilities make it suitable for high-frequency power switching applications, providing improved performance in power supplies and converters.
  • Low Threshold Voltage: The low gate threshold voltage allows for operation at lower gate drive voltages, reducing power consumption and enabling use in low-voltage applications.
  • Advanced Packaging: Housed in a compact TSOP-6 package, the ECH8601R-V-TL-E minimizes board space and is optimized for surface-mount technology.
  • High Temperature Performance: It is capable of operating at high temperatures, making it reliable for industrial applications that require robust thermal management.

Applications

The ECH8601R-V-TL-E is versatile and can be used across a range of applications where efficient power management is crucial. Some of the typical applications include:

  • Power Supply Circuits
  • DC/DC Converters
  • Load Switches
  • Battery Management Systems
  • Motor Drives

Technical Specifications

Parameter Value
Drain-Source Voltage (VDSS) -30 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) -8 A
Power Dissipation (PD) 1.4 W
Operating Temperature Range -55°C to +150°C

With its robust design and ON Semiconductor's commitment to quality, the ECH8601R-V-TL-E stands out as a reliable and efficient solution for advanced electronic designs requiring P-Channel MOSFETs.

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