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ECH8601R-H-TL-E

Part No ECH8601R-H-TL-E
Manufacturer ON Semiconductor
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family FETs - Single
Manufacturer ON Semiconductor
Win Source Part Number 255839-ECH8601R-H-TL-E
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ECH8601R-H-TL-E CAD Model

Description

The ON Semiconductor ECH8601R-H-TL-E is a state-of-the-art P-Channel Power MOSFET designed to deliver high performance and efficiency for a wide range of applications. This MOSFET is a testament to ON Semiconductor's commitment to providing innovative solutions that meet the evolving needs of the electronics industry.

Key Features

  • Low On-Resistance: The ECH8601R-H-TL-E features a low on-resistance, which minimizes conduction losses and improves overall efficiency, making it ideal for power management applications.
  • High-Speed Switching: Engineered for fast switching performance, this MOSFET enables high-frequency operation, which is essential for applications such as DC-DC converters and power supplies.
  • Advanced Packaging: Encased in a compact TSMT-6 package, the ECH8601R-H-TL-E offers a space-saving solution without compromising on power and thermal management.
  • Gate Charge: The device boasts a low total gate charge (Qg), which reduces the energy required to turn the MOSFET on and off, enhancing the efficiency of the switching application.
  • Thermal Performance: With its excellent thermal characteristics, the ECH8601R-H-TL-E is capable of operating at higher temperatures, ensuring reliability even under strenuous conditions.

Applications

The versatility of the ECH8601R-H-TL-E allows it to be utilized in a variety of applications, including:

  • Power Management Circuits
  • DC-DC Converters
  • Battery Powered Devices
  • Load Switches
  • Portable Electronics

Product Specifications

The ECH8601R-H-TL-E MOSFET operates with a drain-source voltage (Vds) of -30V and a continuous drain current (Id) of -6A, making it suitable for handling moderate power levels in electronic circuits. The device's power dissipation (Pd) is rated at 1.25W, which is indicative of its ability to manage power effectively without overheating.

Conclusion

ON Semiconductor's ECH8601R-H-TL-E is an excellent choice for designers looking for a P-Channel MOSFET that offers low on-resistance, high-speed switching, and robust thermal performance. Its compact packaging and energy-efficient operation make it a valuable component for modern electronic applications seeking to optimize power management and extend battery life.

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Pricing & Ordering

Quantity Unit Price Ext. Price
365+ $0.1586 $57.8890
890+ $0.1302 $115.8780
1,375+ $0.1261 $173.3875
1,895+ $0.1221 $231.3795
2,450+ $0.1180 $289.1000
3,280+ $0.1058 $347.0240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 365 pcs
Order Increment : 1 pcs
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