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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 100V
Current - Average Rectified (Io) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25V @ 150mA
Reverse Recovery Time (trr) 6ns
Current - Reverse Leakage @ Vr 1μA @ 100V
Capacitance @ Vr, F 2pF @ 0V, 1MHz
Mounting SMD (SMT)
Case / Package SOD-323
Operating Temperature - Junction -55°C to 150°C
Win Source Part Number 010874-BAS16HT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial
Family Name BAS16H
Introduction Date August 05, 1999
ECCN EAR99
Country of Origin China, Japan, Malaysia, Republic of Korea, United States of America
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian BAS16HT1G CAD Model

Description

ON Semiconductor BAS16HT1G High-Speed Switching Diode

The BAS16HT1G is a high-speed switching diode designed and manufactured by ON Semiconductor, a trusted name in the semiconductor industry. This diode is engineered to deliver fast switching performance with low leakage current, making it an ideal component for high-speed switching applications in a variety of electronic circuits.

With its SOD-123 package, the BAS16HT1G is not only compact but also offers a surface-mount solution that is suitable for automated assembly processes, ensuring ease of integration into PCB designs. This small form factor contributes to space-saving on the circuit board, which is particularly beneficial in miniaturized electronic devices.

Featuring a continuous reverse voltage of 100V and a forward continuous current of 200mA, the BAS16HT1G is capable of handling moderate voltage and current requirements with ease. It also boasts a fast reverse recovery time of typically 6ns, which is crucial for high-speed applications where rapid switching is required.

One of the key advantages of the BAS16HT1G is its low forward voltage drop, which helps to reduce power loss and improve efficiency in electronic systems. This characteristic is particularly important in battery-powered devices where energy conservation is critical. Additionally, the diode's low leakage current ensures minimal power waste when in the off state.

The BAS16HT1G is also characterized by its robustness, with a peak repetitive reverse voltage of 100V and a surge current capability of 2A. This makes it resilient against transient voltage spikes and surges that can occur in electronic circuits, providing a reliable protection mechanism for sensitive components.

ON Semiconductor has designed the BAS16HT1G to meet the stringent requirements of various applications, including high-speed logic circuits, switching power supplies, inverters, and other types of electronic equipment where high-speed switching is necessary. With its combination of speed, efficiency, and compactness, the BAS16HT1G is an excellent choice for designers looking to enhance the performance of their electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3,790+ $0.0132 $50.0280
8,065+ $0.0124 $100.0060
12,500+ $0.0120 $150.0000
18,020+ $0.0111 $200.0220
23,365+ $0.0107 $250.0055
29,130+ $0.0103 $300.0390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 321,000 pieces
MOQ: 3790 pcs
Order Increment : 1 pieza
*Need More Quantity? *Request a Bulk Quantity Quotation?

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