ON Semiconductor 2SA1774T1 PNP Transistor
The 2SA1774T1 is a high-quality PNP transistor designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This bipolar junction transistor (BJT) is specifically engineered for applications requiring low-frequency amplification and switching. The 2SA1774T1 offers a robust solution for designers looking for reliable performance in a compact package.
Key Features:
- Type: PNP Bipolar Transistor
- Collector-Emitter Voltage (VCEO): -50V
- Collector-Base Voltage (VCBO): -60V
- Emitter-Base Voltage (VEBO): -5V
- Collector Current (IC): -150mA
- Power Dissipation (Pd): 150mW
- DC Current Gain (hFE): 120 to 560
- Transition Frequency (fT): 80MHz
- Operating and Storage Junction Temperature Range: -55°C to +150°C
- Package: SOT-23
Designed for general-purpose amplifier and switching applications, the 2SA1774T1 transistor is capable of withstanding a collector-emitter voltage of up to -50V, ensuring stability and reliability in a variety of circuits. With a collector current rating of -150mA, this transistor can handle moderate current loads while maintaining its performance characteristics.
The 2SA1774T1 features a DC current gain (hFE) range that makes it suitable for amplification purposes, and its high transition frequency of 80MHz allows for usage in applications where a fast switching response is required. The device's power dissipation capability of 150mW ensures it can operate at reasonable power levels without overheating.
ON Semiconductor's commitment to quality is evident in the 2SA1774T1's robust temperature range, allowing for operation and storage in extreme conditions. The SOT-23 package is not only space-efficient but also facilitates easy integration into a wide range of electronic assemblies.
Whether you're working on consumer electronics, power management systems, or other applications that require a dependable PNP transistor, the 2SA1774T1 from ON Semiconductor is a choice that offers both performance and reliability.
