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2N5886G

Part No 2N5886G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description Complementary Silicon High-Power Transistors | TRANS NPN 80V 25A TO3
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tray
Transistor Type NPN
Current - Collector (Ic) (Maximum) 25A
Voltage - Collector Emitter Breakdown (Maximum) 80V
Vce Saturation (Maximum) at Ib, Ic 4V at 6.25A, 25A
Current - Collector Cutoff (Maximum) 2mA
DC Current Gain (hFE) (Minimum) at Ic, Vce 20 at 10A, 4V
Maximum Power 200W
Frequency - Transition 4MHz
Temperature Range - Operating -65°C ~ 200°C
Mounting Style Through Hole
Manufacturer Package TO-204AA, TO-3
Supplier Device Package TO-204 (TO-3)
Family Part Number 2N5886
Manufacturer Pack Quantity 100
MSL Level 1 (Unlimited)
Win Source Part Number 1124022-2N5886G
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N5886G CAD Model

Description

ON Semiconductor 2N5886G Power Transistor

The 2N5886G is a high-power NPN bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a trusted leader in innovative semiconductor solutions. This robust transistor is specifically engineered to handle high current and voltage loads, making it an excellent choice for a wide range of power amplification and switching applications.

Key Features

  • Voltage and Current Ratings: The 2N5886G boasts a collector-emitter voltage (VCEO) of 80V, and a collector current (IC) of up to 25A, ensuring reliable operation in demanding environments.
  • High Power Dissipation: With a power dissipation rating of 275W, this transistor can handle significant amounts of power, making it suitable for high-power circuits.
  • Low Saturation Voltage: The device features a low collector-emitter saturation voltage, which enhances its efficiency by minimizing power losses during operation.
  • High Gain Bandwidth Product: The 2N5886G offers a high gain bandwidth product (fT), facilitating its use in high-frequency driver stages and other applications requiring fast switching.

Applications

Due to its robust performance characteristics, the 2N5886G is ideal for a variety of applications, including:

  • Audio power amplifiers
  • Switching regulators
  • DC-DC converters
  • Motor controllers
  • Power inverters

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The 2N5886G is no exception and is built to meet rigorous standards, ensuring reliable performance in even the toughest conditions. Each transistor is subjected to ON Semiconductor's stringent testing and quality control processes, guaranteeing that customers receive components they can depend on.

Environmental Compliance

The 2N5886G is designed with environmental responsibility in mind. It complies with RoHS (Restriction of Hazardous Substances) directives, which means it is free from harmful substances like lead, mercury, and cadmium, making it a safer choice for both consumers and the environment.

Whether you're designing a high-fidelity audio system or a robust power supply, the ON Semiconductor 2N5886G provides the performance and reliability you need to ensure your project's success.

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