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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tape and Reel
Status Obsolete
Diode Type Schottky
Voltage - DC Reverse (Vr) (Maximum) 30V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Maximum) at If 550mV at 1A
Speed Fast Recovery = 200mA (Io)
Current - Reverse Leakage at Vr 1mA at 30V
Mounting Style Through Hole
Manufacturer Package DO-204AL, DO-41, Axial
Supplier Device Package Axial
Operating Temperature - Junction -65°C ~ 125°C
Family Part Number 1N5818
Manufacturer Pack Quantity 5,000
MSL Level 1 (Unlimited)
Win Source Part Number 1122018-1N5818RL
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 1N5818RL CAD Model

Description

ON Semiconductor 1N5818RL Schottky Diode

The 1N5818RL is a robust and efficient Schottky Barrier Diode designed and manufactured by ON Semiconductor, a leading name in the field of power and signal management. This diode is widely recognized for its low forward voltage drop and swift switching capabilities, making it an ideal choice for a variety of applications that require high efficiency and reliability.

With a forward current rating of 1A, the 1N5818RL is capable of handling moderate power requirements. It boasts a maximum forward voltage of just 0.55V at its rated forward current, which contributes to its low power loss characteristics. The diode's low voltage drop is particularly beneficial in applications where power efficiency is crucial.

The 1N5818RL operates at a peak repetitive reverse voltage (V<sub>RRM) of 30V, which ensures that it can withstand transient overvoltage conditions. This feature enhances its reliability in a wide range of operating environments and protects circuits from potential voltage spikes.

The diode's fast switching speed is another key feature, making it suitable for high-frequency applications. This speed is essential for applications like switch-mode power supplies, where rapid switching helps to minimize energy loss and improve overall performance.

ON Semiconductor has packaged the 1N5818RL in a DO-41 axial-lead package, which is known for its ease of installation and robustness. The package is designed to be compatible with various PCB layouts and is also suitable for through-hole mounting, offering flexibility for designers.

The 1N5818RL is also characterized by its low leakage current, which is critical for maintaining the efficiency of the overall system, especially in battery-powered devices where every microampere counts. This low leakage current ensures that the diode will not significantly drain the battery when the device is in the off state.

In summary, the ON Semiconductor 1N5818RL Schottky Diode is a high-performance component that excels in applications requiring low voltage drop, fast switching, and reliable operation under varying conditions. Its robust package and electrical characteristics make it a versatile choice for designers looking to enhance the efficiency and durability of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,400+ $0.0463 $64.8200
3,405+ $0.0381 $129.7305
5,265+ $0.0370 $194.8050
7,250+ $0.0357 $258.8250
9,365+ $0.0346 $324.0290
12,555+ $0.0309 $387.9495
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 11,100 pieces
MOQ: 1400 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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