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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 40V
Current - Average Rectified (Io) 1A (DC)
Voltage - Forward (Vf) (Max) @ If 640mV @ 1A
Speed(Frequency) Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr 100μA @ 40V
Capacitance @ Vr, F 50pF @ 1V, 1MHz
Mounting SMD (SMT)
Case / Package SOD-323
Operating Temperature - Junction 150°C (Max)
Win Source Part Number 095372-PMEG4010BEA
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name PMEG4010BEA
Introduction Date June 10, 2003
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian PMEG4010BEA CAD Model

Description

PMEG4010BEA - Schottky Barrier Rectifier Diode from NXP Semiconductors

The PMEG4010BEA is a highly efficient, low voltage Schottky barrier rectifier diode designed by NXP Semiconductors. Known for its low forward voltage drop and high surge current capability, this diode is a perfect choice for high-efficiency power management applications. The PMEG4010BEA is particularly suitable for use in switching power supplies, converters, free-wheeling diodes, reverse battery protection, and other power switching applications.

This diode comes in a compact, flat lead SOD-123W surface-mounted device (SMD) package that ensures a small footprint on the PCB, making it ideal for space-constrained applications. Its package is designed for optimal thermal performance, ensuring reliability and longevity even under high power and temperature conditions. Moreover, the PMEG4010BEA is AEC-Q101 qualified, making it suitable for automotive applications that demand high reliability and performance.

Key features of the PMEG4010BEA include a continuous reverse voltage of 40V and an average forward current of 1A, which makes it capable of handling moderate power requirements. The peak non-repetitive forward surge current is a robust 15A, ensuring the diode can cope with transient overloads. The low forward voltage drop helps to reduce power loss and improve efficiency, which is critical in portable and battery-powered devices.

The PMEG4010BEA also boasts a fast switching speed, which reduces switching losses and enables operation at higher frequencies, further enhancing the efficiency of the overall application. Its low leakage current ensures minimal power loss when the diode is in the reverse-biased state, contributing to the device's energy-saving attributes.

In summary, the PMEG4010BEA by NXP Semiconductors is a robust and efficient solution for a wide range of applications requiring a Schottky barrier rectifier diode. Its compact form factor, low power loss, high surge capability, and reliability make it an excellent choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
280+ $0.1810 $50.6800
590+ $0.1695 $100.0050
920+ $0.1638 $150.6960
1,315+ $0.1523 $200.2745
1,710+ $0.1466 $250.6860
2,130+ $0.1409 $300.1170
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 269,000 pieces
MOQ: 280 pcs
Order Increment : 1 piece
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