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MML09211HT1

Part No MML09211HT1
Manufacturer NXP / Nexperia
Catalog RF Amplifiers
Description IC RF AMP GSM 400MHZ-1.4GHZ 8DFN / RF Amplifier IC GSM, LTE, W-CDMA 400MHz ~ 1.4GHz 8-DFN (2x2)
Sample
Rohs State rohs
ECAD Module
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Category RF and Wireless - RF Amplifiers
Mfr NXP USA Inc.
Package Tape & Reel
Product Status Obsolete
Frequency 400MHz ~ 1.4GHz
P1dB 20dBm
Gain 21.3dB
Noise Figure 0.66dB
RF Type GSM, LTE, W-CDMA
Voltage - Supply 5V
Current - Supply 60mA
Test Frequency 1.4GHz
Mounting Type Surface Mount
Package / Case 8-VFDFN Exposed Pad
Supplier Device Package 8-DFN (2x2)
Base Product Number MML09
Standard Package 69
ECCN 5A991G
HTSUS 8542.33.0001
Win Source Part Number 1345997-MML09211HT1
Ultra Librarian 3D Model Ultra Librarian MML09211HT1 CAD Model

Description

The MML09211HT1 is a state-of-the-art RF power LDMOS transistor designed and manufactured by NXP Semiconductors, a leader in the semiconductor industry. This high-performance product is a testament to NXP's commitment to providing innovative solutions for RF power applications. The MML09211HT1 is specifically engineered to meet the stringent requirements of high-frequency wireless systems, including base station applications for mobile communications.

Key Features

  • Frequency Range: The MML09211HT1 is optimized for broadband operation, covering a wide frequency range that ensures versatility across multiple RF applications.
  • High Output Power: With its exceptional power output capabilities, this LDMOS transistor is capable of delivering the high power levels required for efficient signal amplification in communication systems.
  • Efficiency: Designed for maximum efficiency, the MML09211HT1 minimizes power loss, which is crucial for maintaining the overall performance and reliability of RF systems.
  • Thermal Performance: The product features an excellent thermal profile, ensuring stability and longevity even under high-temperature operating conditions.
  • Robustness: Durability is a hallmark of the MML09211HT1, which is built to withstand the rigors of demanding RF environments.

Applications

The MML09211HT1 is ideal for a variety of applications, including but not limited to:

  • Telecommunications infrastructure
  • Base station power amplifiers for mobile networks
  • RF energy applications
  • Industrial, scientific, and medical (ISM) applications

Technical Specifications

The technical specifications of the MML09211HT1 are designed to meet the needs of advanced RF systems. These include a high gain figure, ruggedness, and the ability to operate under various conditions without performance degradation. Users can expect reliable operation and consistent performance from this high-quality RF power LDMOS transistor.

Quality and Reliability

NXP Semiconductors is known for its commitment to quality, and the MML09211HT1 is no exception. Each transistor is subject to rigorous testing and quality control measures to ensure that it meets NXP's high standards for performance and reliability. Customers can trust the MML09211HT1 for their critical RF applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ €9.1593 €54.9561
15+ €7.5154 €112.7303
22+ €7.2805 €160.1716
30+ €7.0457 €211.3709
39+ €6.8108 €265.6203
52+ €6.1063 €317.5271
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,500 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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