The BUK9880-55A is a high-performance, N-channel TrenchMOS™ standard level FET manufactured by NXP Semiconductors, a global leader in the electronics industry. This power MOSFET is designed to deliver efficient power management and conversion in a wide range of applications, making it an ideal choice for engineers and designers looking for a reliable and robust component.
Key Features
- Low On-State Resistance (RDS(on)): The device boasts an exceptionally low on-state resistance, which translates to reduced conduction losses and improved overall efficiency in applications.
- High-Speed Switching: With its fast switching capabilities, the BUK9880-55A can handle high-frequency operations, essential for modern power supply designs and converters.
- Standard Level Gate Drive: The standard level gate drive allows for easy integration with a wide range of drive circuits, simplifying design complexities.
- Robust Thermal Performance: The MOSFET is encapsulated in a compact, surface-mount package that enhances thermal performance, ensuring reliability even under high temperature operating conditions.
- Automotive Qualified: Meeting stringent automotive standards, the BUK9880-55A is suitable for use in automotive applications, where reliability and performance are critical.
Applications
The versatility of the BUK9880-55A allows it to be used in a diverse array of applications including, but not limited to:
- DC/DC converters
- Motor drives
- Power management systems
- Automotive systems
- Switching regulators
Technical Specifications
| Parameter |
Value |
| Drain-source voltage (VDS) |
55 V |
| Continuous drain current (ID) |
75 A |
| Power dissipation (PD) |
200 W |
| Operating temperature range |
-55°C to +175°C |
With its impressive combination of efficiency, speed, and thermal performance, the BUK9880-55A is a top choice for designers looking to optimize their power management systems for both high-power and space-constrained applications.