Product Overview: BUK1M200-50SDLD,11
The BUK1M200-50SDLD,11 is a cutting-edge power MOSFET manufactured by NXP Semiconductors, designed to cater to a wide range of applications requiring efficient power management and conversion. This high-performance product is a testament to NXP's commitment to providing innovative and reliable solutions for the electronics industry.
Key Features
- Low On-State Resistance (RDS(on)): The MOSFET features a very low on-state resistance, which minimizes power loss and improves overall efficiency, especially important in power-sensitive applications.
- High-Speed Switching: With its capability for high-speed switching, the BUK1M200-50SDLD,11 is ideal for high-frequency power converters and motor control circuits.
- Advanced TrenchMOS Technology: Utilizing NXP's state-of-the-art TrenchMOS technology, this MOSFET provides superior performance with reduced gate charge and lower switching losses.
- Robust Thermal Performance: The product is designed to handle high temperatures, ensuring reliability and longevity even under strenuous conditions.
- Surface-Mount Device (SMD): As an SMD, the BUK1M200-50SDLD,11 allows for a more compact design and is suitable for automated assembly processes, reducing manufacturing time and costs.
Applications
The versatility of the BUK1M200-50SDLD,11 makes it an excellent choice for a variety of applications, including:
- DC/DC converters
- Power supplies for servers, telecom, and networking equipment
- Motor drives and controls
- Automotive systems and electric vehicles
- LED lighting systems
Product Specifications
| Parameter |
Value |
| Drain-Source Voltage (VDSS) |
200V |
| Continuous Drain Current (ID) |
50A |
| Power Dissipation (PD) |
110W |
| Operating Temperature Range |
-55°C to +175°C |
In summary, the BUK1M200-50SDLD,11 from NXP is a robust and efficient solution for modern power management challenges, offering the performance and reliability required by today's high-tech electronic devices.