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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Diode Configuration 1 Pair Series Connection
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 40V
Current - Average Rectified (Io) (per Diode) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 550mV @ 100mA
Current - Reverse Leakage @ Vr 500nA @ 25V
Operating Temperature - Junction 150°C (Max)
Mounting SMD (SMT)
Case / Package SOT-323-3
Win Source Part Number 72906-BAT854SW
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BAT854SW CAD Model

Description

Introducing the NXP BAT854SW Schottky Barrier Diode

The NXP BAT854SW is a cutting-edge Schottky barrier diode designed for high-efficiency applications requiring a low forward voltage drop and fast switching. This diode is part of NXP's extensive range of semiconductor products, known for their reliability and performance in demanding environments. The BAT854SW is a surface-mounted device that comes in a compact, leadless SOD-323 package, which is ideal for space-constrained applications.

Key Features

  • Low Forward Voltage Drop: The BAT854SW boasts a low forward voltage drop, which reduces power loss and improves efficiency in circuit operation.
  • Fast Switching Speed: With its fast switching capability, this diode is well-suited for high-frequency applications, ensuring minimal switching losses and better performance.
  • High Junction Temperature: The device can operate at a high junction temperature, offering a higher margin for thermal conditions and enhancing the reliability of the end product.
  • Low Capacitance: Its low diode capacitance is ideal for high-speed switching and applications where signal integrity is crucial.
  • Surface-Mount Package: The SOD-323 package is designed for automatic pick-and-place assembly, which streamlines the manufacturing process and reduces production costs.

Applications

The BAT854SW is versatile and can be used in a variety of applications, including:

  • DC-DC converters
  • Power management systems
  • Reverse polarity protection circuits
  • High-frequency rectification
  • Switching power supplies
  • Automotive applications

Technical Specifications

The technical specifications of the BAT854SW include a maximum repetitive reverse voltage (VRRM) of 30V, a continuous forward current (IF) of 1A, and a peak non-repetitive forward surge current (IFSM) of 8A. Its operating junction temperature ranges from -65°C to +150°C, which ensures stability and performance under extreme conditions.

For designers and engineers looking for a high-performance Schottky diode, the NXP BAT854SW is an excellent choice. It combines efficiency, speed, and compact packaging to meet the needs of modern electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.5955 $50.6175
205+ $0.4886 $100.1630
320+ $0.4733 $151.4560
440+ $0.4581 $201.5640
565+ $0.4428 $250.1820
760+ $0.3970 $301.7200
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 120,500 pieces
MOQ: 85 pcs
Order Increment : 1 piece
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