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BC56-16PA,115

Part No BC56-16PA,115
Manufacturer Nexperia USA Inc.
Catalog RF Transistors (BJT)
Description TRANS NPN 80V 1A 3HUSON / Bipolar (BJT) Transistor NPN 80 V 1 A 180MHz 420 mW Surface Mount 3-HUSON (2x2)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Nexperia USA Inc.
Package Tape & Reel
Transistor Type NPN
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V
Power - Max 420 mW
Frequency - Transition 180MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case 3-PowerUDFN
Supplier Device Package 3-HUSON (2x2)
Base Product Number BC56
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names 568-12648-2,568-12648-1-ND,568-12648-2-ND,568-12648-6,BC56-16PA,115-ND,568-12648-6-ND,1727-2350-6,1727-2350-1,1727-2350-2,934065811115,568-12648-1
Standard Package 3,000
Win Source Part Number 1117621-BC56-16PA,115
Ultra Librarian 3D Model Ultra Librarian BC56-16PA,115 CAD Model

Description

The BC56-16PA,115 is a high-quality NPN bipolar (BJT) transistor that can be used in various applications. It has a power - max of 420 mW, a voltage - collector emitter breakdown (Max) of 80 V, and a current - collector (Ic) (Max) of 1 A. The transistor has a Vce saturation (Max) @ Ib, Ic of 500mV @ 50mA, 500mA, and a DC current gain (hFE) (Min) @ Ic, Vce of 100 @ 150mA, 2V. It can operate at a temperature range of 150°C (TJ) and has a frequency - transition of 180MHz. The BC56-16PA,115 is available in a 3-PowerUDFN case/package and is mounted using SMD (SMT) technology. The MSL level is 1 (Unlimited), and the supply and demand status are balanced. The manufacturer is Nexperia.

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