The UPD4164C-12 is a 65,536-bit (64K) Dynamic Random Access Memory (DRAM) manufactured by NEC. It is organized as 64K x 1 bit and features a fast access time of 120ns. This DRAM is designed for applications that require high-speed data storage and retrieval, such as microcomputers, graphics cards, and digital signal processing systems.

Applications:

• Microcomputer Systems: Used as main memory in personal computers and embedded systems of the era.
• Graphics Cards: Employed in frame buffers and display memory for early graphics processing units.
• Digital Signal Processing (DSP): Utilized in DSP systems for data storage and manipulation in signal processing applications.
• Instrumentation: Integrated into test and measurement equipment for data acquisition and buffering.
• Industrial Control Systems: Used in programmable logic controllers (PLCs) and industrial automation devices requiring memory.

Features:

• High Density: 64Kbit density provides substantial memory capacity.
• Fast Access Time: 120ns access time enables quick data retrieval and storage.
• Single +5V Power Supply: Operates on a single +5V power supply for ease of integration.
• TTL Compatibility: Compatible with standard TTL logic levels for simple interfacing.
• Refresh Cycle: Requires periodic refresh cycles to maintain data integrity.

Benefits:

• Increased System Performance: Fast access time improves overall system performance and responsiveness.
• Simple Integration: TTL compatibility allows for easy interfacing with other digital components.
• High Reliability: Designed for reliable data storage with proper refresh management.
• Reduced Board Space: High density allows for more memory in a smaller physical space.
• Cost-Effective: Provides a cost-effective memory solution for a variety of applications.

The UPD4164C-12 is typically packaged in a 16-pin DIP (Dual In-line Package). The refresh cycle is crucial for data retention, requiring periodic refresh operations. Bypass capacitors should be used to ensure stable power supply and minimize noise. Refer to the datasheet for specific timing and voltage requirements. It offers a balance of speed, density, and ease of use for various memory applications.