The UPA2452TL-E1 is a P-channel power MOSFET manufactured by NEC. It is designed for power management applications where efficiency and space are critical. This MOSFET utilizes advanced trench technology to minimize on-resistance (Rds(on)) and gate charge, which leads to reduced power losses and improved overall system performance. The compact surface-mount package allows for easy integration into various electronic devices.

Applications

• DC-DC converters
• Load switching
• Power management in portable devices
• Battery charging circuits

Features

• P-Channel MOSFET
• Low on-resistance (Rds(on))
• Low gate charge (Qg)
• Surface-mount package
• Logic-level gate drive
• Avalanche rated

Benefits

• High power efficiency
• Reduced heat dissipation
• Extended battery life
• Simplified thermal management
• Compact design
• Direct interface with low voltage control signals

Additional Details

The UPA2452TL-E1 offers a low gate threshold voltage, enabling direct logic-level driving, making it compatible with various microcontrollers and control systems. Its low Rds(on) minimizes conduction losses, and low gate charge reduces switching losses, contributing to enhanced power efficiency. This MOSFET is well-suited for battery-powered devices where energy conservation is crucial. The device is designed to handle high inrush currents and provides robust performance in harsh operating conditions. The UPA2452TL-E1 complies with RoHS standards. Its combination of efficiency, compact size, and robust performance make it a popular choice for various power management applications. The trench MOSFET structure ensures excellent switching characteristics and low noise. The device is designed for optimal thermal performance within its small footprint, simplifying PCB layout and thermal design considerations.