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NE721S01-T1

Part No NE721S01-T1
Manufacturer NEC
Catalog Custom Parts (N - R)
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 1112755-NE721S01-T1
Categories Custom Parts
Manufacturer NEC
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NE721S01-T1 CAD Model

Description

The NE721S01-T1 is a GaAs (Gallium Arsenide) MESFET (Metal-Semiconductor Field-Effect Transistor) designed for low-noise amplifier (LNA) applications in various communication systems. It is manufactured by NEC (now Renesas Electronics).

Applications

  • Low Noise Amplifiers (LNAs): Used in LNAs for cellular base stations, satellite receivers, and other communication equipment.
  • Wireless Communication Systems: Employed in wireless LANs, GPS receivers, and other wireless systems.
  • Microwave Receivers: Applications in microwave receivers and front-end amplifiers.
  • Instrumentation: Used in test and measurement equipment requiring low-noise amplification.

Features

  • Low Noise Figure: Offers a very low noise figure for high sensitivity in receiver applications.
  • High Gain: Provides high gain amplification for improved signal strength.
  • High Maximum Available Gain (MAG): High MAG ensures optimal performance in amplifier circuits.
  • High Cutoff Frequency (fT): High cutoff frequency enables operation at high frequencies.
  • Surface Mount Package: Available in a small surface-mount package for easy integration.

Benefits

  • Improved Receiver Sensitivity: Low noise figure enhances receiver sensitivity, allowing for detection of weak signals.
  • Increased Signal Strength: High gain provides improved signal strength for better communication performance.
  • Enhanced System Performance: Overall improvement in system performance due to low-noise and high-gain characteristics.

Technical Specifications (Typical)

  • Frequency Range: Specified frequency range for optimal performance.
  • Noise Figure: Typical noise figure at a specified frequency.
  • Gain: Typical gain at a specified frequency.
  • Drain-Source Voltage (VDS): Maximum drain-source voltage.
  • Gate-Source Voltage (VGS): Maximum gate-source voltage.

The NE721S01-T1 is an excellent choice for low-noise amplifier applications requiring high gain and low noise figure, especially in the front-end stages of receivers in various communication systems. Its GaAs MESFET technology ensures high performance at microwave frequencies.

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