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Same model may have multiple batches, images only for reference.
APT50GT60BRDQ2G Microsemi Corporation
Same model may have multiple batches, images only for reference.

APT50GT60BRDQ2G

Part No APT50GT60BRDQ2G
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description IGBT 600V 110A 446W TO247
Datasheet
APT50GT60BRDQ2G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Active
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 110A
Pulsed Collector Current 150A
Collector-emitter saturation voltage(Max) 2.5V @ 15V, 50A
Maximum Power Dissipation 446W
Total Switching Energy(Ets) 995μJ (on), 1070μJ (off)
Input Type Standard
Gate Charge 240nC
Turn-on and Turn-off delay time 14ns/240ns
Testing Conditions 400V, 50A, 5 Ohm, 15V
Reverse Recovery Time (trr) 22ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 [B]
Win Source Part Number 1018074-APT50GT60BRDQ2G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian APT50GT60BRDQ2G CAD Model

Description

The Microsemi Corporation 1018074-APT50GT60BRDQ2G is a high-performance IGBT in TO-247 [B] package.

  • Maximum Collector Current: 110A
  • Collector-Emitter Breakdown Voltage: 600V
  • Gate Charge: 240nC
  • Reverse Recovery Time: 22ns
  • Applications: high-power applications, including motor control, power supplies, and welding equipment
  • Total Switching Energy (On): 995μJ
  • Total Switching Energy (Off): 1070μJ
  • Collector-Emitter Saturation Voltage: 2.5V @ 15V, 50A

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