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Same model may have multiple batches, images only for reference.
APT31M100B2 Real Image
Same model may have multiple batches, images only for reference.

APT31M100B2

Part No APT31M100B2
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel MOSFET
Datasheet
APT31M100B2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series POWER MOS 8
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 1000V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs 260nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 8500pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 1040W (Tc)
Rds On (Maximum) @ Id, Vgs 380 mOhm @ 16A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package T-MAX [B2]
Package TO-247-3 Variant
Win Source Part Number 1146749-APT31M100B2
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name APT31M100B2
Introduction Date January 09, 2006
ECCN EAR99
Estimated EOL Date 2024
Quantity per package 30
Ultra Librarian 3D Model Ultra Librarian APT31M100B2 CAD Model

Description

The APT31M100B2 is a POWER MOS 8 series N-channel MOSFET from Microsemi Corporation.

  • Maximum Drain-Source Voltage: 1000V
  • Continuous Drain Current: 32A @ 25°C
  • Maximum On-Resistance: 380 mOhm @ 16A and 10V
  • Package: TO-247-3
  • Gate Charge: 260nC @ 10V
  • Maximum Power Dissipation: 1040W @ Tc
  • Operating Temperature: -55°C to 150°C (TJ)
  • Applications: Power supplies, motor control, and lighting

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $31.2813 $62.5626
5+ $25.6666 $128.3330
7+ $24.8646 $174.0522
10+ $24.0626 $240.6260
13+ $23.2605 $302.3865
17+ $20.8542 $354.5214
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