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APT30GT60BRDQ2G

Part No APT30GT60BRDQ2G
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description IGBT 600V 64A 250W TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Active
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 64A
Pulsed Collector Current 110A
Collector-emitter saturation voltage(Max) 2.5V @ 15V, 30A
Maximum Power Dissipation 250W
Total Switching Energy(Ets) 80μJ (on), 605μJ (off)
Input Type Standard
Gate Charge 7.5nC
Turn-on and Turn-off delay time 12ns/225ns
Testing Conditions 400V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr) 22ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 [B]
Win Source Part Number 139224-APT30GT60BRDQ2G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian APT30GT60BRDQ2G CAD Model

Description

APT30GT60BRDQ2G

The APT30GT60BRDQ2G is a robust IGBT tailored for handling high-power applications with superior switching performance. This device offers a combination of low on-state voltage and high input impedance, making it suitable for roles in welders, induction heating, and traction drives.

  • Applications/Projects:
    • Welders
    • Induction heating applications
    • Traction drives
    • Advanced power electronics
  • Features and Benefits:
    • Low on-state voltage: Enhances energy efficiency.
    • High input impedance: Facilitates control.
    • Excellent power density: Optimizes space utilization.
    • Robust mechanical design: Supports high-reliability applications.

    For a full understanding of the device's capabilities and constraints, please review the technical datasheet provided by the manufacturer.

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