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Same model may have multiple batches, images only for reference.
2N3486A Microsemi Corporation
Same model may have multiple batches, images only for reference.

2N3486A

Part No 2N3486A
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description Chip Type 2C2907A Geometry 0600 Polarity PNP | TRANS PNP 60V 0.6A TO-46
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Transistor Type PNP
Current - Collector (Ic) (Maximum) 600mA
Voltage - Collector Emitter Breakdown (Maximum) 60V
Vce Saturation (Maximum) at Ib, Ic 1.6V at 50mA, 500mA
Current - Collector Cutoff (Maximum) 10μA (ICBO)
DC Current Gain (hFE) (Minimum) at Ic, Vce 100 at 150mA, 10V
Maximum Power 400mW
Temperature Range - Operating -65°C ~ 200°C
Mounting Style Through Hole
Manufacturer Package TO-206AB, TO-46-3 Metal Can
Supplier Device Package TO-46-3
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1123728-2N3486A
Manufacturer Homepage www.semicoa.com/
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N3486A CAD Model

Description

The 2N3486A is a discrete semiconductor product manufactured by Microsemi Corporation.

  • Type: NPN transistor
  • Mounting Style: Through-hole
  • Supplier Device Package: TO-39 (TO-205AD)
  • Manufacturer Pack Quantity: 1
  • Maximum Collector Current: 500mA
  • Maximum Collector-Emitter Breakdown Voltage: 100V
  • Collector Cutoff Maximum: 10μA (ICBO)
  • Vce Saturation (Maximum) @ Ib, Ic: 600mV @ 30mA, 300mA
  • DC Current Gain (hFE) (Minimum) @ Ic, Vce: 100 @ 150mA, 10V
  • Maximum Power: 1W

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