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Same model may have multiple batches, images only for reference.
1N5551 Real Image
Same model may have multiple batches, images only for reference.

1N5551

Part No 1N5551
Manufacturer Microsemi Corporation
Catalog Diodes, Rectifiers - Single
Description DIODE GEN PURP 400V 3A D5B
Datasheet
1N5551 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 400V
Current - Average Rectified (Io) 3A
Voltage - Forward (Vf) (Max) @ If 1.2V @ 9A
Speed(Frequency) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2μs
Current - Reverse Leakage @ Vr 1μA @ 400V
Mounting SMD (SMT)
Case / Package D-5B
Operating Temperature - Junction -65°C to 175°C
Win Source Part Number 087207-1N5551
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian 1N5551 CAD Model

Description

1N5551 High-Voltage NPN Transistor

The 1N5551 is a high-voltage NPN transistor used extensively in amplifier and signal processing applications. It is known for its high breakdown voltage and low saturation voltage, making it suitable for various electronic applications.

  • Applications and Projects:
    • Audio amplifier designs
    • Signal processing circuits
    • Switching applications
  • Features and Benefits:
    • High collector-emitter voltage: Suitable for high-voltage operations
    • Low noise figure: Enhances signal quality in amplifications
    • Wide frequency response: Makes it ideal for RF and audio applications
  • Additional Details:
    • Collector-Emitter Voltage: 160V
    • Collector Current: 0.6A
    • Transition Frequency: 100MHz

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Quantity Unit Price Ext. Price
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33+ $3.5738 $117.9354
51+ $3.4622 $176.5722
69+ $3.3504 $231.1776
90+ $3.2388 $291.4920
120+ $2.9037 $348.4440
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