The MT58LC32K32B3LG-11 is a 1,048,576-bit Double Data Rate (DDR) Synchronous Static RAM (SRAM) module from Micron Technology Inc., organized as 32K x 32. This SRAM is engineered for applications where high-speed data access and substantial memory capacity are critical.

Applications

• High-performance networking devices (routers, switches, etc.)
• Advanced industrial control systems
• Imaging and video processing equipment
• Data acquisition systems
• Telecommunications applications requiring fast memory access

Features

• Density: 1Mb (32K x 32)
• DDR Operation: Data transfer on both clock edges
• Clock Frequency: Up to 90 MHz
• Fast Access Time: Typically 11 ns
• Single 3.3V Power Supply
• LVTTL Compatible I/O
• Burst Counter Advance Feature
• On-Chip Address Counter
• Byte Write Control
• Available in a BGA Package

Benefits

• High-Speed Performance: DDR operation provides double the bandwidth compared to single data rate SRAM.
• Large Memory Capacity: 1Mb density allows for storage of significant amounts of data.
• Low Latency: Fast access time ensures quick data retrieval.
• Simplified System Integration: LVTTL compatibility allows easy interfacing with other system components.
• Reduced Power Consumption: Single 3.3V operation optimizes power efficiency.

Additional Details

The MT58LC32K32B3LG-11 is constructed using advanced CMOS technology, contributing to its high performance and low power consumption. The byte write control feature permits selective writing to individual bytes within a word, increasing flexibility. The burst counter advance feature enhances data transfer efficiency in burst mode. The BGA package ensures minimal footprint and optimal signal integrity. Detailed timing characteristics, power consumption details, and package dimensions can be found in the Micron datasheet for this part number. This device is typically used in applications where performance and memory bandwidth are critical.