The MT58L256L36DT-10 is a high-performance, 8,847,360-bit Double Data Rate (DDR) Synchronous Pipelined Burst Static RAM (SRAM) device manufactured by Micron Technology Inc. It's designed for applications demanding high bandwidth and low latency memory access.

Applications

• Networking equipment such as routers and switches
• High-performance computing systems
• Digital signal processing (DSP)
• High-end printers
• Telecommunications infrastructure

Features

• 256Mb density organized as 256K x 36
• DDR operation: Transfers data on both rising and falling edges of the clock
• 100 MHz clock frequency
• Fast clock-to-data valid time (tCD)
• Pipelined burst operation for high throughput
• Single 2.5V power supply
• LVTTL-compatible inputs and outputs
• On-chip address counter
• Byte write control
• Available in various package options

Benefits

• High Bandwidth: DDR operation doubles the data transfer rate compared to single data rate SRAMs.
• Low Latency: Fast clock-to-data valid time ensures quick access to data.
• Simplified System Design: On-chip address counter reduces external logic requirements.
• Reduced Power Consumption: Single 2.5V power supply minimizes power dissipation.
• Increased System Performance: High speed and low latency contribute to overall system performance improvement.

Additional Details

The MT58L256L36DT-10 utilizes advanced CMOS technology to achieve high speed and low power consumption. Its pipelined burst architecture allows for efficient data transfer in burst mode, making it suitable for applications where continuous data flow is essential. The device is available in different temperature grades to suit various operating environments. It is typically packaged in a 119-ball FBGA package for space efficiency and improved signal integrity. Refer to the Micron datasheet for detailed timing characteristics, power consumption figures, and package dimensions.