The Micron MT53D768M64D8JL-046 WT:E is a DDR4 SDRAM (Synchronous Dynamic Random-Access Memory) component. It is designed for high-performance applications needing substantial memory and bandwidth, commonly found in various computing devices.

Applications

• High-Performance Computing (HPC)
• Gaming PCs and Consoles
• Servers and Data Centers
• Workstations
• Networking Infrastructure

Features

• Capacity: 6GB (768M x 64)
• Interface: DDR4 SDRAM
• Data Rate: Up to 2133 MT/s
• Operating Voltage: 1.2V
• CAS Latency (CL): Specified in the part number's timing parameters
• Burst Length: 8
• On-Die Termination (ODT): Improves signal integrity at high speeds.
• Write CRC: Enables error detection and correction.
• Lead-Free and RoHS Compliant
• Package: FBGA

Benefits

• Large Capacity: The 6GB capacity provides ample memory space for demanding applications such as video editing, 3D rendering, and scientific simulations.
• High Bandwidth: DDR4 technology delivers significantly higher bandwidth compared to previous DDR generations, enabling faster data transfer rates and improved system performance.
• Low Power Consumption: Operating at 1.2V, the memory module consumes less power, contributing to energy efficiency and reducing heat generation.
• Improved Signal Integrity: On-Die Termination (ODT) minimizes signal reflections, ensuring reliable data transfer at high speeds.
• Enhanced Data Reliability: The Write CRC feature helps detect and correct errors, safeguarding data integrity during write operations.

Technical Specifications

The MT53D768M64D8JL-046 WT:E is compliant with JEDEC standards for DDR4 SDRAM. It supports various timing parameters and configurations to optimize performance. The component is manufactured using advanced process technology for enhanced reliability and low power consumption. Refer to the Micron datasheet for detailed timing specifications, electrical characteristics, and package dimensions.