The MT46V16M16TG-5B:F is a 256Mb DDR SDRAM (Double Data Rate Synchronous Dynamic Random-Access Memory) chip manufactured by Micron Technology Inc. It is designed for high-speed memory applications requiring large bandwidth and low latency. This DDR SDRAM chip provides a fast and efficient memory solution for a variety of computing and embedded systems.

Applications:

• Graphics cards
• Gaming consoles
• High-performance computing systems
• Networking equipment
• Embedded systems with high memory bandwidth requirements
• Video processing equipment

Features:

• 256Mb (16M x 16) memory capacity
• DDR (Double Data Rate) architecture: Transfers data on both rising and falling edges of the clock signal.
• Operating frequency: Up to 200 MHz (DDR400)
• CAS latency (CL): 2, 2.5, and 3
• Supply voltage: 2.5V
• Double data rate interface
• Differential clock inputs (CK and /CK)
• Auto precharge option for single row access
• Burst length: 2, 4, 8

Benefits:

• High bandwidth: DDR architecture provides twice the bandwidth of traditional SDR SDRAM.
• Low latency: Fast access times improve system performance.
• Large memory capacity: 256Mb capacity allows for storing large amounts of data.
• Low power consumption: 2.5V supply voltage reduces power consumption.
• Cost-effective: Provides a high-performance memory solution at a competitive price.

Additional Details:

The MT46V16M16TG-5B:F is organized internally as 4 banks of 4M x 16 bits. It supports a variety of operating modes, including burst read and write operations. The chip is available in a variety of packages, including TSOP and FBGA. The -5B designation indicates the speed grade of the chip (DDR400). The specific timing parameters of the chip vary depending on the operating frequency and CAS latency. The MT46V16M16TG-5B:F is lead-free and RoHS compliant.