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MT29F2T08GELBEJ4:B

Part No MT29F2T08GELBEJ4:B
Manufacturer Micron Technology Inc.
Catalog IT infrastructure Memory
Description 2Tb(256GB) QLC NAND Flash
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category IT infrastructure Memory
Manufacturer Micron Technology Inc.
Win Source Part Number 1453830-MT29F2T08GELBEJ4:B
Package Bulk
Product Status Obsolete
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (TLC)
Memory Size 2Tbit
Memory Organization 256G x 8
Memory Interface Parallel
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Grade -
Mounting Type Surface Mount
Package / Case 132-VBGA
Supplier Device Package 132-VBGA (12x18)
Ultra Librarian 3D Model Ultra Librarian MT29F2T08GELBEJ4:B CAD Model

Description

The MT29F2T08GELBEJ4:B is a part of Micron's extensive lineup of QLC (Quad-Level Cell) NAND Flash memory chips, offering an impressive 2Tb (256GB) of storage capacity. This device utilizes QLC technology, enabling it to store four bits of data per cell, which significantly increases its storage density over traditional NAND Flash memories. This high-capacity memory solution is designed to address the growing need for larger data storage in consumer electronics, enterprise storage systems, and cloud storage services. Its advanced QLC technology makes it suitable for applications requiring high-density data storage without compromising on data integrity and endurance. The MT29F2T08GELBEJ4:B stands out for its efficient design, offering manufacturers and designers a reliable and cost-effective storage solution that does not sacrifice performance for storage capacity, making it an excellent choice for next-generation storage challenges.

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