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M29W064FB70N3E

Part No M29W064FB70N3E
Manufacturer Micron Technology Inc.
Catalog Flash
Description 64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory | IC FLASH 64M PARALLEL 48TSOP
Sample
Rohs State rohs
ECAD Module
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Categories Integrated Circuits
Manufacturer Micron Technology Inc.
Packaging Tray
Status Obsolete
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 64Mb (8M x 8, 4M x 16)
Memory Interface Parallel
Write Cycle Time - Word, Page 70ns
Access Time 70ns
Supply Voltage (V) 2.7V ~ 3.6V
Temperature Range - Operating -40°C ~ 125°C
Mounting Style SMD
Manufacturer Package 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP
Family Part Number M29W064
Manufacturer Pack Quantity 576
MSL Level 3 (168 Hours)
Win Source Part Number 1210256-M29W064FB70N3E
Manufacturer Homepage www.numonyx.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian M29W064FB70N3E CAD Model

Description

The M29W064FB70N3E is a 64 Mbit (8 Mb x 8 or 4 Mb x 16) Flash memory device from Micron Technology. It is a non-volatile memory that can be electrically erased and reprogrammed. It is designed for applications requiring high density, low power consumption, and fast access times.

Applications:

  • Embedded Systems: Used for storing firmware and application code in embedded systems.
  • Networking Equipment: Employed in routers, switches, and other networking devices.
  • Industrial Control Systems: Used in industrial control systems for storing configuration data and program code.
  • Consumer Electronics: Found in various consumer electronic devices such as digital cameras and MP3 players.

Features:

  • 64 Mbit Density: Provides a high storage capacity of 64 Mbits.
  • Page Mode Operation: Allows for fast programming and erasing of data.
  • Sector Erase: Supports sector erase operations for flexible memory management.
  • Low Power Consumption: Designed for low power consumption in both active and standby modes.
  • 70ns Access Time: Offers fast access times for quick data retrieval.
  • Single 3V Supply: Operates from a single 3V power supply.

Benefits:

  • High Density Storage: Provides ample storage capacity for code and data.
  • Fast Performance: Enables quick data access and programming.
  • Low Power Consumption: Minimizes power consumption in battery-powered applications.
  • Reliable Operation: Offers reliable data storage and retrieval.
  • Versatile: Suitable for a wide range of embedded and storage applications.

Additional Details:

The M29W064FB70N3E has specific timing parameters, such as program time, erase time, and read cycle time, which are detailed in the Micron datasheet. The device supports various protection mechanisms to prevent accidental data corruption. It is typically available in surface-mount packages (e.g., TSOP) for easy PCB assembly. The datasheet specifies the recommended operating conditions, including supply voltage range and temperature range. Proper decoupling capacitors should be used near the power supply pins to minimize noise and ensure stable operation. Refer to the Micron datasheet for detailed electrical characteristics, timing diagrams, and application notes. The device utilizes a specific memory map and addressing scheme for accessing the stored data.

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56+ $3.1361 $175.6216
77+ $3.0349 $233.6873
99+ $2.9337 $290.4363
132+ $2.6302 $347.1864
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