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AS7C3256-10TIN

Part No AS7C3256-10TIN
Manufacturer Microchip Technology
Catalog SRAM
Description SRAM 32Kx8 28 PIN
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Win Source Part Number 957497-AS7C3256-10TIN
Series *
Ultra Librarian 3D Model Ultra Librarian AS7C3256-10TIN CAD Model

Description

The AS7C3256-10TIN by Microchip Technology is a high-performance, 32,768-word by 8-bit CMOS Static Random Access Memory (SRAM) device. This memory module is designed to provide a reliable and efficient solution for a vast array of electronic applications, where fast access and low power consumption are essential.

Key Features:

  • High-Speed Access: With an access time of 10ns, this SRAM delivers swift performance that is suitable for high-speed microprocessor and microcontroller applications.
  • Low Power Operation: Engineered for energy efficiency, the AS7C3256-10TIN operates with low power dissipation, making it ideal for battery-powered and portable devices.
  • Wide Operating Voltage: The device supports a wide range of operating voltages from 4.5V to 5.5V, providing flexibility in various system designs.
  • Stable Performance: It features a data retention voltage as low as 2V, ensuring data stability under a broad spectrum of conditions.
  • Package Options: Available in a 28-pin TSOP (Thin Small Outline Package), the AS7C3256-10TIN is designed for space-saving and surface-mount technology applications.
  • Industrial Temperature Range: This SRAM operates over an industrial temperature range of -40°C to +85°C, making it suitable for use in harsh environmental conditions.

Applications:

The AS7C3256-10TIN is versatile and can be used in a variety of applications, including:

  • Embedded processors and controllers
  • Telecommunications equipment
  • Automotive electronics
  • Industrial control systems
  • Medical devices
  • Networking hardware

With its combination of speed, efficiency, and reliability, the AS7C3256-10TIN from Microchip Technology stands out as an excellent choice for designers looking to optimize their memory solutions. Its robust feature set ensures that it can meet the stringent requirements of a wide range of high-performance electronic systems.

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