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Same model may have multiple batches, images only for reference.
IXGH90N60B3 Real Image
Same model may have multiple batches, images only for reference.

IXGH90N60B3

Part No IXGH90N60B3
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 600V 75A 660W TO247
Datasheet
IXGH90N60B3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
IGBT Type PT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 75A
Pulsed Collector Current 500A
Collector-emitter saturation voltage(Max) 1.8V @ 15V, 90A
Maximum Power Dissipation 660W
Total Switching Energy(Ets) 1.32mJ (on), 1.37mJ (off)
Input Type Standard
Gate Charge 172nC
Turn-on and Turn-off delay time 31ns/150ns
Testing Conditions 480V, 60A, 2 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXGH)
Win Source Part Number 1049653-IXGH90N60B3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXGH90N60B3 CAD Model

Description

The IXGH90N60B3 is a PT type IGBT manufactured by IXYS.

  • Gate Charge: 172nC
  • Operating Temperature Range: -55°C to 150°C
  • Package: TO-247AD (IXGH)
  • Maximum Collector Current: 75A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Power Dissipation: 660W
  • Pulsed Collector Current: 500A
  • Collector-Emitter Saturation Voltage: 1.8V @ 15V, 90A
  • Total Switching Energy: 1.32mJ (on) and 1.37mJ (off)
  • Turn-On and Turn-Off Delay Time: 31ns/150ns
  • Supply and Demand Status: Sufficient

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