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Same model may have multiple batches, images only for reference.
IXGH32N90B2D1 Real Image
Same model may have multiple batches, images only for reference.

IXGH32N90B2D1

Part No IXGH32N90B2D1
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 900V 64A 300W TO247 / IGBT PT 900 V 64 A 300 W Through Hole TO-247AD
Datasheet
IXGH32N90B2D1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr IXYS
Series HiPerFAST™
Package Tube
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 900 V
Current - Collector (Ic) (Max) 64 A
Current - Collector Pulsed (Icm) 200 A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 32A
Power - Max 300 W
Switching Energy 2.2mJ (off)
Input Type Standard
Gate Charge 89 nC
Td (on/off) @ 25°C 20ns/260ns
Test Condition 720V, 32A, 5Ohm, 15V
Reverse Recovery Time (trr) 190 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AD
Base Product Number IXGH32
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Win Source Part Number 1222329-IXGH32N90B2D1
Ultra Librarian 3D Model Ultra Librarian IXGH32N90B2D1 CAD Model

Description

The IXGH32N90B2D1 is a PT IGBT manufactured by IXYS.

  • Collector-Emitter Breakdown Voltage: 900V
  • Maximum Power: 300W
  • Maximum Collector Current: 64A
  • Reverse Recovery Time: 190ns
  • Gate Charge: 89nC
  • Switching Energy: 2.2mJ (off)
  • Maximum Vce(on): 2.7V @ 15V, 32A
  • Package: TO-247-3
  • Supplier Device Package: TO-247AD
  • Designed for: Discrete semiconductor products
  • Popularity: Medium

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