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Same model may have multiple batches, images only for reference.
IXGH32N60BU1 Real Image
Same model may have multiple batches, images only for reference.

IXGH32N60BU1

Part No IXGH32N60BU1
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 600V 60A 200W TO247AD
Datasheet
IXGH32N60BU1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Bulk
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 60A
Pulsed Collector Current 120A
Collector-emitter saturation voltage(Max) 2.3V @ 15V, 32A
Maximum Power Dissipation 200W
Total Switching Energy(Ets) 600μJ (off)
Input Type Standard
Gate Charge 110nC
Turn-on and Turn-off delay time 25ns/100ns
Testing Conditions 480V, 32A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) 50ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXGH)
Win Source Part Number 1049611-IXGH32N60BU1
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Motor Drive & Control, Power Management
Ultra Librarian 3D Model Ultra Librarian IXGH32N60BU1 CAD Model

Description

The IXYS IGBT is a high-performance power transistor designed for use in motor drive and control, and power management applications.

  • Collector-Emitter Breakdown Voltage: 600V
  • Maximum Current Collector: 60A
  • Maximum Power Dissipation: 200W
  • Package: TO-247AD (IXGH)
  • Reverse Recovery Time (trr): 50ns
  • Gate Charge: 110nC
  • Collector-Emitter Saturation Voltage (Max): 2.3V @ 15V, 32A
  • Status: Obsolete (EOL)
  • Replacements: STGW30NC60W, IXGH30N60B, and IRFP22N60KPBF

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