The IXFP12N65X2M is a MOSFET transistor designed for use in discrete semiconductor products. It is a N-channel FET type and features a drain to source voltage (Vdss) of 650 V and a continuous drain current (Id) of 12A (Tc) @ 25°C.

• Type: N-channel MOSFET
• Drain to Source Voltage (Vdss): 650 V
• Continuous Drain Current (Id): 12A (Tc) @ 25°C
• Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
• Vgs(th) (Max) @ Id: 5V @ 250μA
• Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
• Power Dissipation (Max): 40W (Tc)
• Temperature Range: -55°C ~ 150°C (TJ)
• Series: HiPerFET™, Ultra X2
• Package: TO-220-3 Full Pack, Isolated Tab