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Same model may have multiple batches, images only for reference.
IXDN55N120D1 Real Image
Same model may have multiple batches, images only for reference.

IXDN55N120D1

Part No IXDN55N120D1
Manufacturer IXYS
Catalog IGBTs - Modules
Description IGBT 1200V 100A W/DIODE SOT-227B
Datasheet
IXDN55N120D1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Status Active
IGBT Type NPT
Configuration Single
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 100A
Maximum Power Dissipation 450W
Collector-emitter saturation voltage(Max) 2.8V @ 15V, 55A
Collector Cut-off Current(Max) 3.8mA
Input Capacitance (Cies) @ Vce 3.3nF @ 25V
Input Standard
NTC Thermistor No
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting Chassis Mount
Case / Package SOT-227B
Win Source Part Number 083268-IXDN55N120D1
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXDN55N120D1 CAD Model

Description

The IXYS IXDN55N120D1 is a discrete semiconductor product that is a single configuration, NPT type IGBT with a maximum collector current of 100A and a collector-emitter breakdown voltage of 1200V.

  • Manufacturer: IXYS
  • Product Type: Discrete Semiconductor Product
  • IGBT Type: NPT type
  • Configuration: Single
  • Maximum Collector Current: 100A
  • Collector-Emitter Breakdown Voltage: 1200V
  • Collector Cut-Off Current: 3.8mA
  • Maximum Power Dissipation: 450W
  • Temperature Range: -40°C to 150°C
  • Package: SOT-227B case
  • Market Popularity: High
  • Component Status: Limited supply and demand status.

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Quantity Unit Price Ext. Price
1+ $257.7778 $257.7778
2+ $231.1112 $462.2224
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Availability: 1,000 pieces
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