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IXDF504SIA

Part No IXDF504SIA
Manufacturer IXYS
Catalog PMIC - Gate Drivers
Description IC GATE DRIVER 4A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Integrated Circuits
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
Driven Configuration Low-Side
Channel Type Independent
Number of Drivers 2
Gate Type IGBT, N-Channel, P-Channel MOSFET
Supply Voltage - Operating 4.5 V to 30 V
Logic Voltage - VIL, VIH 0.8V, 3V
Current - Peak Output (Source, Sink) 4A, 4A
Input Type Inverting, Non-Inverting
Rise and Fall Time 9ns, 8ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Win Source Part Number 1049282-IXDF504SIA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXDF504SIA CAD Model

Description

The IXDF504SIA is a high-speed, high-current gate driver from IXYS. It is specifically designed to drive MOSFETs and IGBTs in high-frequency power conversion applications. The driver offers fast switching speeds, low propagation delay, and high peak output current to efficiently switch power devices.

Applications

  • Switch-mode power supplies (SMPS)
  • Motor drives
  • DC-DC converters
  • Uninterruptible power supplies (UPS)
  • Induction heating

Features

  • High Peak Output Current
  • Fast Switching Speeds
  • Low Propagation Delay
  • Wide Operating Voltage Range
  • Under-Voltage Lockout (UVLO) Protection
  • Over-Temperature Protection

Benefits

  • Improved efficiency in power conversion due to fast switching and reduced switching losses.
  • Enhanced system reliability with under-voltage lockout and over-temperature protection features.
  • Simplified gate drive circuitry due to high output current capability.
  • Flexible design options due to wide operating voltage range.
  • Reduced EMI and RFI generation with controlled switching characteristics.

Additional Details

The IXDF504SIA features a peak output current of 4A, a typical propagation delay of 15ns, and operates from a supply voltage range of 4.5V to 18V. It is available in a SOIC-8 package and is suitable for driving a wide range of MOSFETs and IGBTs in demanding power applications.

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