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IS61WV51216EEBLL-10BLI

Part No IS61WV51216EEBLL-10BLI
Manufacturer ISSI, Integrated Silicon Solution Inc
Catalog Memory
Description IC SRAM 8MBIT PARALLEL 48TFBGA / SRAM - Asynchronous Memory IC 8Mb (512K x 16) Parallel 10 ns 48-TFBGA (6x8)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs)>Memory
Mfr ISSI, Integrated Silicon Solution Inc
Package Tray
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 8Mb (512K x 16)
Memory Interface Parallel
Write Cycle Time - Word, Page 10ns
Access Time 10 ns
Voltage - Supply 2.4V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting SMD (SMT)
Package / Case 48-TFBGA
Supplier Device Package 48-TFBGA (6x8)
Base Product Number IS61WV51216
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041
Standard Package 480
Win Source Part Number 982077-IS61WV51216EEBLL-10BLI
Ultra Librarian 3D Model Ultra Librarian IS61WV51216EEBLL-10BLI CAD Model

Description

The IS61WV51216EEBLL-10BLI is an integrated circuit that falls under the category of memory from ISSI.

  • Memory Type: Volatile SRAM
  • Memory Interface: Asynchronous Dynamic Random Access Memory
  • Memory Size: 8 megabits
  • Access Time: 10 nanoseconds
  • Voltage Supply Range: 2.4 to 3.6 volts
  • Write Cycle Time: 10 nanoseconds

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.7601 $64.5606
14+ $8.8288 $123.6032
21+ $8.5530 $179.6130
28+ $8.2771 $231.7588
37+ $8.0011 $296.0407
49+ $7.1735 $351.5015
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Availability: 12,443 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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