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IS61DDB44M18A-250B4L

Part No IS61DDB44M18A-250B4L
Manufacturer ISSI, Integrated Silicon Solution Inc
Catalog Custom Parts (E - I)
Description 4MX18, 250MHZ, SRAM, FBGA-165
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Win Source Part Number 1205495-IS61DDB44M18A-250B4L
Categories Custom Parts
Manufacturer ISSI, Integrated Silicon Solution Inc
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IS61DDB44M18A-250B4L CAD Model

Description

The IS61DDB44M18A-250B4L is a high-speed, low-power Double Data Rate (DDR) Static Random-Access Memory (SRAM) device manufactured by ISSI (Integrated Silicon Solution Inc.). This SRAM chip is designed for applications requiring very fast access times and moderate storage capacity, such as networking, communications, and high-performance computing systems. The '250' in the part number indicates an access time of 2.5ns, emphasizing its speed. It features a 4M x 18-bit organization and operates at a low voltage for reduced power consumption.

Applications:

  • Networking Equipment: Routers, switches, and other networking devices require fast SRAM for buffering packets and storing routing tables.
  • Communications Systems: Used in base stations, wireless communication devices, and other communication equipment for high-speed data storage.
  • High-Performance Computing: Utilized in caching systems, memory controllers, and other high-speed data processing applications.
  • Test and Measurement Equipment: Employed in oscilloscopes, logic analyzers, and other test equipment for capturing and analyzing data.
  • Medical Imaging Equipment: Found in medical imaging systems for real-time data processing and storage.

Features:

  • DDR SRAM: Double data rate architecture for high bandwidth.
  • 4M x 18 Organization: Provides a balance between capacity and speed.
  • Very Fast Access Time (2.5ns): Enables quick data retrieval and storage.
  • Low Power Consumption: Reduces power usage in battery-powered and energy-sensitive applications.
  • 3.3V Power Supply: Common voltage for wide compatibility.
  • Advanced CMOS Technology: Offers excellent performance and reliability.

Benefits:

  • Increased System Performance: High speed enables faster data transfer and processing.
  • Reduced Latency: Minimizes delays in critical data paths.
  • Lower Power Consumption: Extends battery life in portable devices and reduces overall system power usage.
  • Improved System Reliability: Advanced CMOS technology ensures robust and stable operation.
  • Wide Compatibility: 3.3V power supply simplifies integration into various systems.

Additional Details:

The IS61DDB44M18A-250B4L is typically packaged in a BGA (Ball Grid Array) package for high-density mounting. It is crucial to consult the manufacturer's datasheet for detailed electrical characteristics, timing diagrams, and layout recommendations. Proper decoupling and grounding techniques are essential for optimal performance and stability, particularly at high speeds. Signal termination may be required to maintain signal integrity. The operating temperature range should also be considered for the intended application environment.

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