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Same model may have multiple batches, images only for reference.
SMBT3906E6327HTSA1 Real Image
Same model may have multiple batches, images only for reference.

SMBT3906E6327HTSA1

Part No SMBT3906E6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description TRANS PNP 40V 0.2A SOT-23
Datasheet
SMBT3906E6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity PNP
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 400mV @ 5mA, 50mA
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 10mA, 1V
Maximum Power Dissipation 330mW
Frequency - Transition 250MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Win Source Part Number 104190-SMBT3906E6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SMBT3906E6327HTSA1 CAD Model

Description

The Infineon Technologies SMBT3906E6327HTSA1 is a PNP transistor that is suitable for use in various applications.

  • Manufacturer: Infineon Technologies
  • Maximum Collector-Emitter Breakdown Voltage: 40V
  • Collector Cut-off Current: 50nA (ICBO)
  • Transistor Polarity: PNP
  • Typical Gain: 100 @ 10mA and 1V
  • Package: PG-SOT23-3
  • Mounting Type: SMD (SMT)
  • Maximum Power Dissipation: 330mW
  • Maximum Current Collector: 200mA
  • Temperature Range for Operating: up to 150°C (TJ)

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