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Same model may have multiple batches, images only for reference.
SIGC158T120R3LEX1SA2 Real Image
Same model may have multiple batches, images only for reference.

SIGC158T120R3LEX1SA2

Part No SIGC158T120R3LEX1SA2
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Datasheet
SIGC158T120R3LEX1SA2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Infineon Technologies
Package Bulk
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector Pulsed (Icm) 450 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 150A
Input Type Standard
Mounting SMD (SMT)
Package / Case Die
Supplier Device Package Die
Base Product Number SIGC158
Other Names SP000533970,SIGC158T120R3LE
Standard Package 1
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277477-SIGC158T120R3LEX1SA2
Ultra Librarian 3D Model Ultra Librarian SIGC158T120R3LEX1SA2 CAD Model

Description

Infineon Technologies SIGC158T120R3LEX1SA2 is a single IGBT transistor with a voltage collector-emitter breakdown of 1200V and a current collector pulsed of 450A. The transistor has a Vce(on) (Max) @ Vge, Ic of 2.1V @ 15V, 150A and is packaged in a die.

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