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Same model may have multiple batches, images only for reference.
SIGC121T60NR2CX1SA2 Real Image
Same model may have multiple batches, images only for reference.

SIGC121T60NR2CX1SA2

Part No SIGC121T60NR2CX1SA2
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Datasheet
SIGC121T60NR2CX1SA2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Infineon Technologies
Package Bulk
Product Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 150 A
Current - Collector Pulsed (Icm) 450 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 150A
Input Type Standard
Td (on/off) @ 25°C 125ns/225ns
Test Condition 300V, 150A, 1.5Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case Die
Supplier Device Package Die
Other Names SP000012814,448-SIGC121T60NR2CX1SA2
Standard Package 1
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN OBSOLETE
Win Source Part Number 1277461-SIGC121T60NR2CX1SA2
Ultra Librarian 3D Model Ultra Librarian SIGC121T60NR2CX1SA2 CAD Model

Description

The SIGC121T60NR2CX1SA2 is a single IGBT transistor designed for high voltage applications.

  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Collector Current: 150A
  • Pulsed Collector Current: 450A
  • Vce(on): 2.5V @ 15V and 150A
  • Junction Temperature Range: -55°C to 150°C
  • Package: Die

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