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Same model may have multiple batches, images only for reference.
SGB07N120ATMA1 Real Image
Same model may have multiple batches, images only for reference.

SGB07N120ATMA1

Part No SGB07N120ATMA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 16.5A 125W TO263-3-2 / Trans IGBT Chip N-CH 1200V 16.5A 125000mW 3-Pin(2+Tab) D2PAK T/R
Datasheet
SGB07N120ATMA1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel package
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 16.5A
Current - Collector Pulsed (Icm) 27A
Vce(on) (Maximum) @ Vge, Ic 3.6V @ 15V, 8A
Power - Max 125W
Switching Energy 1mJ
Input Type Standard
Gate Charge 70nC
Td (on/off) @ 25°C 27ns/440ns
Test Condition 800V, 8A, 47 Ohm, 15V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Package PG-TO263-3-2
Win Source Part Number 774977-SGB07N120ATMA1
Popularity Medium
Supply and Demand Status Limited
Family Name SGB07N120ATMA1
Introduction Date March 01, 2000
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian SGB07N120ATMA1 CAD Model

Description

The Infineon Technologies SGB07N120ATMA1 is an NPT IGBT from Infineon Technologies.

  • Maximum Power: 125W
  • Collector Current Pulsed (Icm): 27A
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Temperature Range: -55°C to 150°C (TJ)
  • Gate Charge: 70nC
  • Switching Energy: 1mJ
  • Supply and Demand Status: Limited

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