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Same model may have multiple batches, images only for reference.
IRGSL4B60KD1PBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRGSL4B60KD1PBF

Part No IRGSL4B60KD1PBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IGBT 600V 11A 63W TO262
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 11A
Current - Collector Pulsed (Icm) 22A
Vce(on) (Maximum) at Vge, Ic 2.5V at 15V, 4A
Maximum Power 63W
Switching Energy 73μJ (on), 47μJ (off)
Input Type Standard
Gate Charge 12nC
Td (on/off) at 25°C 22ns/100ns
Test Condition 400V, 4A, 100Ohm, 15V
Reverse Recovery Time (trr) 93ns
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package TO-262
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188419-IRGSL4B60KD1PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRGSL4B60KD1PBF CAD Model

Description

The Infineon Technologies IRGSL4B60KD1PBF is an NPT IGBT type semiconductor device that comes in a TO-262 package.

  • Reverse recovery time (trr): 93ns
  • Gate charge: 12nC
  • Designed to operate @: a temperature range of -55°C to 175°C
  • Current - collector (Ic) (maximum): 11A
  • Voltage - collector emitter breakdown (maximum): 600V
  • Maximum power: 63W
  • Vce(on) (maximum): 2.5V @ 15V and 4A
  • Status: obsolete, and its supply and demand status is limited
  • Packaging: tube
  • Manufacturer pack quantity: 50

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