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Same model may have multiple batches, images only for reference.
IRGP4630D-EPBF Real Image
Same model may have multiple batches, images only for reference.

IRGP4630D-EPBF

Part No IRGP4630D-EPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT WITH RECOVERY DIODE / IGBT 600 V 47 A 206 W Through Hole TO-247AD
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Infineon Technologies
Package Tube
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 47 A
Current - Collector Pulsed (Icm) 54 A
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 18A
Power - Max 206 W
Switching Energy 95µJ (on), 350µJ (off)
Input Type Standard
Gate Charge 35 nC
Td (on/off) @ 25°C 40ns/105ns
Test Condition 400V, 18A, 22Ohm, 15V
Reverse Recovery Time (trr) 100 ns
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AD
Standard Package 25 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 921527-IRGP4630D-EPBF
Ultra Librarian 3D Model Ultra Librarian IRGP4630D-EPBF CAD Model

Description

The 921527-IRGP4630D-EPBF is a single IGBT (Insulated Gate Bipolar Transistor) from Infineon Technologies.

  • Category: Discrete Semiconductor Products
  • Package Type: Tube
  • Standard Package: 25 pieces
  • Maximum Power Rating: 206W
  • Collector-Emitter Breakdown Voltage: 600V
  • Current Ratings (Continuous): 47A
  • Current Ratings (Pulsed): 54A
  • Vce(on): 1.95V @ a gate-emitter voltage of 15V and a collector current of 18A
  • Switching Energy (On): 95µJ
  • Switching Energy (Off): 350µJ
  • Gate Charge: 35nC
  • Switching Time (Turn-On): 40ns
  • Switching Time (Turn-Off): 105ns

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