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Same model may have multiple batches, images only for reference.
IRGIB7B60KDPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRGIB7B60KDPBF

Part No IRGIB7B60KDPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 12A 39W TO220FP
Datasheet
IRGIB7B60KDPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 12A
Pulsed Collector Current 24A
Collector-emitter saturation voltage(Max) 2.2V @ 15V, 8A
Maximum Power Dissipation 39W
Total Switching Energy(Ets) 160μJ (on), 160μJ (off)
Input Type Standard
Gate Charge 29nc
Turn-on and Turn-off delay time 23ns/140ns
Testing Conditions 400V, 8A, 50 Ohm, 15V
Reverse Recovery Time (trr) 95ns
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB Full-Pak
Win Source Part Number 1047349-IRGIB7B60KDPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRGIB7B60KDPBF CAD Model

Description

The Infineon Technologies IGBT Type NPT with a maximum collector-emitter breakdown voltage of 600V is a high-performance power transistor that is ideal for use in discrete semiconductor products.

  • Manufacturer: Infineon Technologies
  • IGBT Type: NPT
  • Collector-Emitter Breakdown Voltage (Max): 600V
  • Current Collector (Max): 12A
  • Power Dissipation (Max): 39W
  • Mounting: Through-hole
  • Case Package: TO-220AB Full-Pak
  • Reverse Recovery Time (trr): 95ns
  • Gate Charge: 29nc
  • Turn-On Delay Time: 23ns
  • Turn-Off Delay Time: 140ns
  • Collector-Emitter Saturation Voltage (Max): 2.2V @ 15V, 8A
  • Total Switching Energy (Ets): 160μJ (on), 160μJ (off)
  • Testing Conditions: 400V, 8A, 50 Ohm, 15V
  • Category: Discrete Semiconductor Products
  • Popularity: Medium
  • Supply and Demand: Balanced

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